Performance Characterization of Heterojunction Bipolar Transistor as an Optoelectronic Mixer
نویسندگان
چکیده
منابع مشابه
Performance Characterization of Heterojunction Bipolar 1 Transistor as an Optoelectronic Mixer
This paper explains the development of physical model Heterojunction Bipolar Transistor (HBT) and characterizes its performance as an optoelectronic mixer (OEM). HBT has been identified as a suitable device to be implemented in optoelectronic mixers by simultaneously photodetecting an intensity modulated laser beam at 1550nm and frequency translating the detected signal to a higher or lower fre...
متن کاملCharacterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors
ACKNOWLEDGEMENTS I am deeply indebted to Dr. John D. Cressler for his patience, guidance, and support throughout my master's program. My inspiration came from his passion for research and his confidence in my abilities. Working under his leadership in such an exciting field was both educationally and professionally enriching. I would also like to thank the other members of my thesis advisory co...
متن کاملCharacteristics of InP/InGaAs based Heterojunction Phototransistor for Optoelectronic Mixer
Characteristics of InP/InGaAs based Heterojunction Phototransistor for Optoelectronic Mixer By Seung-Chan Han School of Electrical and Electronic Engineering College of Engineering Yonsei University Wireless communication is becoming an crucial area of today’s life. With chasing this trend, there are continuously growing demands for ultra-wideband transmission due to insufficiency of available ...
متن کاملGaAs Heterojunction Bipolar Transistor Emitter Design
We demonstrate that GaAs-based HBTs with very low base currents at both low and high injection levels can be achieved using either Al0.35Ga0.65As or InGaP in the emitter with the proper optimization of structure and growth. We observe an order of magnitude reduction in space charge recombination current as the Al composition, and hence the energy-gap, of the emitter increases from 25% (1.77 eV)...
متن کاملAn enhanced model for InGaP/GaAs heterojunction bipolar transistor
This paper presents an improved InGaP/GaAs heterojunction bipolar transistor (HBT) model based on the Vertical Bipolar Inter-Company (VBIC) model. New transport current expression is proposed by considering the heterojunction effect. Collector capacitance is developed due to the mobile charge modulation, and the transit time formula is improved to account for electron velocity variation with th...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Jurnal Teknologi
سال: 2012
ISSN: 2180-3722,0127-9696
DOI: 10.11113/jt.v58.2553